Design of a 200 Watt single-ended wideband gallium nitride-high electron mobility transistor power amplifier for wideband code division multiple access basestations

Design of a 200 Watt single-ended wideband gallium nitride-high electron mobility transistor power amplifier for wideband code division multiple access basestations

Recent studies show that power amplifiers based on gallium nitride (GaN) high electron mobility transistors (HEMT) technology achieve higher power density compared to Silicon and GaAs field effect transistors (FET) due its wideband gap property and heterostructure. This results to higher power per t...

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Bibliographic Details
Main Author: Andres, Pierreangelo Philamer
Format: text
Language:English
Published: Animo Repository 2009
Subjects:
Transistor amplifiers
Power amplifiers
Gallium nitride
High-electron-mobility transistors
Modulation-doped field-effect transistors
Other Engineering
Online Access:https://animorepository.dlsu.edu.ph/etd_masteral/3755
https://animorepository.dlsu.edu.ph/context/etd_masteral/article/10593/viewcontent/CDTG004542_P.pdf
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Institution: De La Salle University
Language: English

Internet

https://animorepository.dlsu.edu.ph/etd_masteral/3755
https://animorepository.dlsu.edu.ph/context/etd_masteral/article/10593/viewcontent/CDTG004542_P.pdf

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