Design of a 200 Watt single-ended wideband gallium nitride-high electron mobility transistor power amplifier for wideband code division multiple access basestations
Recent studies show that power amplifiers based on gallium nitride (GaN) high electron mobility transistors (HEMT) technology achieve higher power density compared to Silicon and GaAs field effect transistors (FET) due its wideband gap property and heterostructure. This results to higher power per t...
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| Format: | text |
| Language: | English |
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Animo Repository
2009
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| Online Access: | https://animorepository.dlsu.edu.ph/etd_masteral/3755 https://animorepository.dlsu.edu.ph/context/etd_masteral/article/10593/viewcontent/CDTG004542_P.pdf |
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| Institution: | De La Salle University |
| Language: | English |