Area-efficient and low stand-by power 1k-byte transmission-gate-based non-imprinting high-speed erase (TNIHE) SRAM

• المؤلفون الرئيسيون: Ho, Weng-Geng, Ne, Kyaw Zwa Lwin, Prashanth Srinivas, Nagarajan, Chong, Kwen-Siong, Kim, Tony Tae-Hyoung, Gwee, Bah Hwee
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2016
• الموضوعات: transistors; SRAM cells
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/83999; http://hdl.handle.net/10220/41565
• المؤسسة: Nanyang Technological University

We propose a novel 15-T Transmission-gate-based Non-Imprinting High-speed Erase (TNIHE) SRAM cell with emphases on low area overhead and low stand-by power attributes for highly secured data storage applications. We benchmark our proposed 15-T TNIHE SRAM cell against the reported 22-T Non-Imprinting...