Area-efficient and low stand-by power 1k-byte transmission-gate-based non-imprinting high-speed erase (TNIHE) SRAM

We propose a novel 15-T Transmission-gate-based Non-Imprinting High-speed Erase (TNIHE) SRAM cell with emphases on low area overhead and low stand-by power attributes for highly secured data storage applications. We benchmark our proposed 15-T TNIHE SRAM cell against the reported 22-T Non-Imprinting...

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Bibliographic Details
Main Authors: Ho, Weng-Geng, Ne, Kyaw Zwa Lwin, Prashanth Srinivas, Nagarajan, Chong, Kwen-Siong, Kim, Tony Tae-Hyoung, Gwee, Bah Hwee
Other Authors: School of Electrical and Electronic Engineering
Format: Conference or Workshop Item
Language:English
Published: 2016
Subjects:
Online Access:https://hdl.handle.net/10356/83999
http://hdl.handle.net/10220/41565
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Institution: Nanyang Technological University
Language: English