An investigation of the temperature dependence of the resistivity of PPy(p-TS) and the I-V characteristics of the PPy/n-Si heterojunctions
Rectifying heterojunctions of PPy(p-TS) with n-Si were formed by mechanical contact. The IV characteristics of the junctions were measured and analyzed. Barrier heights ranging from 0.74 - 0.77 were obtained. The junctions were found to have reverse current densities in the range 1.53 - 3.81 x 10 to...
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| Format: | text |
| Language: | English |
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Animo Repository
1995
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| Online Access: | https://animorepository.dlsu.edu.ph/etd_masteral/1781 |
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| Institution: | De La Salle University |
| Language: | English |