An investigation of the temperature dependence of the resistivity of PPy(p-TS) and the I-V characteristics of the PPy/n-Si heterojunctions
Rectifying heterojunctions of PPy(p-TS) with n-Si were formed by mechanical contact. The IV characteristics of the junctions were measured and analyzed. Barrier heights ranging from 0.74 - 0.77 were obtained. The junctions were found to have reverse current densities in the range 1.53 - 3.81 x 10 to...
Saved in:
| Main Author: | |
|---|---|
| Format: | text |
| Language: | English |
| Published: |
Animo Repository
1995
|
| Subjects: | |
| Online Access: | https://animorepository.dlsu.edu.ph/etd_masteral/1781 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | De La Salle University |
| Language: | English |
Be the first to leave a comment!