Terahertz emission from a double asymmetric quantum well p-i-n structure

• Main Authors: Abat, Jonathan Ray, Anguluan, Eloise, de las Alas, Kaye Ann, Mabilangan, Arvin, Payod, Renebeth B., Muldera, Joselito, Salvador, Arnel, Somintac, Armando, Estacio, Elmer
• Format: text
• Published: Animo Repository 2010
• Subjects: Terahertz spectroscopy; Quantum wells; Physics
• Online Access: https://animorepository.dlsu.edu.ph/faculty_research/13618
• Institution: De La Salle University

Terahertz time-domain spectroscopy was performed on a double asymmetric quantum wells p-i-n structure. Part of the p-layer of the sample was etched to ensure that the THz emission is from the active region. THz emission was detected on both unetched and etched samples. The THz signal was improved after removing the GaAs cap layer which in effect minimized the free-carrier THz absorption. Optical characterizations were also performed to verify the presence of quantum wells in the sample which also confirms the amplification of the THz emission due to the enhanced quantum well absorption.