Detection performance of LT-GaAs-on-silicon bowtie photoconductive antenna prototype

• Main Authors: Afalla, Jessica, De Los Reyes, Alexander, Faustino, Angela, Vistro, Victor D.C., Bardolaza, Hannah R., Catindig, Gerald Angelo, Gonzales, Karl Cedric, Prieto, Elizabeth Ann, Muldera, Joselito, Mag-Usara, Valynn, Cabello, Neil Irvin, Copa, Vernalyn C., Ferrolino, John Paul, Torosyan, Garik, Furuya, Takashi, Kitahara, Hideaki, Somintac, Armando, Salvador, Arnel A., Tani, Masahiko, Estacio, Elmer
• Format: text
• Published: Animo Repository 2019
• Subjects: Antennas (Electronics); Gallium arsenide; Photoconductivity; Gallium arsenide semiconductors; Physics
• Online Access: https://animorepository.dlsu.edu.ph/faculty_research/3666; https://animorepository.dlsu.edu.ph/context/faculty_research/article/4668/type/native/viewcontent/IRMMW_THz.2019.8874195
• Institution: De La Salle University

Bowtie photoconductive antennas (PCAs) with a 10-μm gap were fabricated on epitaxial grown LT-GaAs layers on Silicon substrates (LT-GaAs-on-Si). The samples used were grown with distinct growth parameters. The performance of the PCAs as terahertz detectors are presented in this report. © 2019 IEEE.