Understanding the formation of midgap states in GaAs(001)-β2(2×4) with surface defects based on density functional theory

Understanding the defect feature of GaAs(001) in the formation of midgap state is significant in gaining new insights for its applications in efficient photoconductive detection and emission in terahertz (THz) technology. In this work, we investigate the role of surface point defects in the structur...

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Main Authors:	Bacuyag, Dhonny, David, Melanie, Escano, Mary Clare, Tani, Masahiko
Format:	text
Published:	Animo Repository 2018
Subjects:	Gallium arsenide Photoconductivity Surfaces (Technology)—Defects Submillimeter waves Physics
Online Access:	https://animorepository.dlsu.edu.ph/faculty_research/3668 https://animorepository.dlsu.edu.ph/context/faculty_research/article/4670/type/native/viewcontent/IRMMW_THz.2018.8510252
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Institution:	De La Salle University

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spelling	oai:animorepository.dlsu.edu.ph:faculty_research-46702021-09-22T01:06:59Z Understanding the formation of midgap states in GaAs(001)-β2(2×4) with surface defects based on density functional theory Bacuyag, Dhonny David, Melanie Escano, Mary Clare Tani, Masahiko Understanding the defect feature of GaAs(001) in the formation of midgap state is significant in gaining new insights for its applications in efficient photoconductive detection and emission in terahertz (THz) technology. In this work, we investigate the role of surface point defects in the structural and electronic properties of GaAs(001)-β2(2×4) based on density functional theory (DFT). Midgap states were found even on surfaces with high formation energies relative to the clean surface as seen in their band structures. The formation of these states is attributed to the redistribution of charges and supports the observed two-step photon absorption in experiments. © 2018 IEEE. 2018-10-25T07:00:00Z text text/html https://animorepository.dlsu.edu.ph/faculty_research/3668 info:doi/10.1109/IRMMW-THz.2018.8510252 https://animorepository.dlsu.edu.ph/context/faculty_research/article/4670/type/native/viewcontent/IRMMW_THz.2018.8510252 Faculty Research Work Animo Repository Gallium arsenide Photoconductivity Surfaces (Technology)—Defects Submillimeter waves Physics
institution	De La Salle University
building	De La Salle University Library
continent	Asia
country	Philippines Philippines
content_provider	De La Salle University Library
collection	DLSU Institutional Repository
topic	Gallium arsenide Photoconductivity Surfaces (Technology)—Defects Submillimeter waves Physics
spellingShingle	Gallium arsenide Photoconductivity Surfaces (Technology)—Defects Submillimeter waves Physics Bacuyag, Dhonny David, Melanie Escano, Mary Clare Tani, Masahiko Understanding the formation of midgap states in GaAs(001)-β2(2×4) with surface defects based on density functional theory
description	Understanding the defect feature of GaAs(001) in the formation of midgap state is significant in gaining new insights for its applications in efficient photoconductive detection and emission in terahertz (THz) technology. In this work, we investigate the role of surface point defects in the structural and electronic properties of GaAs(001)-β2(2×4) based on density functional theory (DFT). Midgap states were found even on surfaces with high formation energies relative to the clean surface as seen in their band structures. The formation of these states is attributed to the redistribution of charges and supports the observed two-step photon absorption in experiments. © 2018 IEEE.
format	text
author	Bacuyag, Dhonny David, Melanie Escano, Mary Clare Tani, Masahiko
author_facet	Bacuyag, Dhonny David, Melanie Escano, Mary Clare Tani, Masahiko
author_sort	Bacuyag, Dhonny
title	Understanding the formation of midgap states in GaAs(001)-β2(2×4) with surface defects based on density functional theory
title_short	Understanding the formation of midgap states in GaAs(001)-β2(2×4) with surface defects based on density functional theory
title_full	Understanding the formation of midgap states in GaAs(001)-β2(2×4) with surface defects based on density functional theory
title_fullStr	Understanding the formation of midgap states in GaAs(001)-β2(2×4) with surface defects based on density functional theory
title_full_unstemmed	Understanding the formation of midgap states in GaAs(001)-β2(2×4) with surface defects based on density functional theory
title_sort	understanding the formation of midgap states in gaas(001)-β2(2×4) with surface defects based on density functional theory
publisher	Animo Repository
publishDate	2018
url	https://animorepository.dlsu.edu.ph/faculty_research/3668 https://animorepository.dlsu.edu.ph/context/faculty_research/article/4670/type/native/viewcontent/IRMMW_THz.2018.8510252
_version_	1767195953469587456

Understanding the formation of midgap states in GaAs(001)-β2(2×4) with surface defects based on density functional theory

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