Understanding the formation of midgap states in GaAs(001)-β2(2×4) with surface defects based on density functional theory

• المؤلفون الرئيسيون: Bacuyag, Dhonny, David, Melanie, Escano, Mary Clare, Tani, Masahiko
• التنسيق: text
• منشور في: Animo Repository 2018
• الموضوعات: Gallium arsenide; Photoconductivity; Surfaces (Technology)—Defects; Submillimeter waves; Physics
• الوصول للمادة أونلاين: https://animorepository.dlsu.edu.ph/faculty_research/3668; https://animorepository.dlsu.edu.ph/context/faculty_research/article/4670/type/native/viewcontent/IRMMW_THz.2018.8510252

Understanding the defect feature of GaAs(001) in the formation of midgap state is significant in gaining new insights for its applications in efficient photoconductive detection and emission in terahertz (THz) technology. In this work, we investigate the role of surface point defects in the structur...