Understanding the formation of midgap states in GaAs(001)-β2(2×4) with surface defects based on density functional theory

• Main Authors: Bacuyag, Dhonny, David, Melanie, Escano, Mary Clare, Tani, Masahiko
• 格式: text
• 出版: Animo Repository 2018
• 主題: Gallium arsenide; Photoconductivity; Surfaces (Technology)—Defects; Submillimeter waves; Physics
• 在線閱讀: https://animorepository.dlsu.edu.ph/faculty_research/3668; https://animorepository.dlsu.edu.ph/context/faculty_research/article/4670/type/native/viewcontent/IRMMW_THz.2018.8510252
• 機構: De La Salle University

Understanding the defect feature of GaAs(001) in the formation of midgap state is significant in gaining new insights for its applications in efficient photoconductive detection and emission in terahertz (THz) technology. In this work, we investigate the role of surface point defects in the structur...