Terahertz emission enhancement in low-temperaturegrown GaAs with an n-GaAs buffer in reflection and transmission excitation geometries

Terahertz emission enhancement in low-temperaturegrown GaAs with an n-GaAs buffer in reflection and transmission excitation geometries

The growth of low-temperature-grown GaAs (LTG-GaAs) on semi-insulating GaAs substrate with a 0.2 μm n-GaAs buffer demonstrated enhanced terahertz (THz) emission in reflection and transmission excitation geometries via time-domain spectroscopy. The transient photocurrent of the sample in reflection a...

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Bibliographic Details
Main Authors: Prieto, Elizabeth Ann P., Vizcara, Sheryl Ann B., Somintac, Armando S., Salvador, Arnel A., Estacio, Elmer S., Que, Christopher T., Yamamoto, Kohji, Tani, Masahiko
Format: text
Published: Animo Repository 2014
Subjects:
Gallium arsenide
Terahertz spectroscopy
Physics
Online Access:https://animorepository.dlsu.edu.ph/faculty_research/3819
https://animorepository.dlsu.edu.ph/context/faculty_research/article/4821/type/native/viewcontent/JOSAB.31.000291
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Institution: De La Salle University
Description
Summary:The growth of low-temperature-grown GaAs (LTG-GaAs) on semi-insulating GaAs substrate with a 0.2 μm n-GaAs buffer demonstrated enhanced terahertz (THz) emission in reflection and transmission excitation geometries via time-domain spectroscopy. The transient photocurrent of the sample in reflection and transmission geometries resulting from ultrafast excitation yielded a 215% and 165% increase in the THz emission, respectively, as compared with a sample grown with an undoped GaAs buffer. The LTG-GaAs film with n-GaAs buffer exhibited a significant increase in its built-in field as supported by calculations and photoreflectance experiments. The enhanced THz emission intensity was comparable with bulk p-InAs. © 2014 Optical Society of America.

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