Ultra-low reflectivity polycrystalline silicon surfaces formed by surface structure chemical transfer method
A nanocrystalline Si layer can be formed by the surface structure chemical transfer (SSCT) method in which a platinum mesh is instantaneously contacted with polycrystalline Si wafers immersed in hydrogen peroxide plus hydrofluoric acid solutions. The polycrystalline Si surface after the SSCT method...
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| Main Authors: | , , , |
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| Format: | text |
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Animo Repository
2013
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| Subjects: | |
| Online Access: | https://animorepository.dlsu.edu.ph/faculty_research/5898 |
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| Institution: | De La Salle University |
| Summary: | A nanocrystalline Si layer can be formed by the surface structure chemical transfer (SSCT) method in which a platinum mesh is instantaneously contacted with polycrystalline Si wafers immersed in hydrogen peroxide plus hydrofluoric acid solutions. The polycrystalline Si surface after the SSCT method possesses an ultra-low reflectivity. The nanocrystalline Si layer possesses a 100–150 nm thickness, and gives a photoluminescence with a peak maximum at ∼670 nm, indicating band-gap widening. The minority carrier lifetime of as-sliced Si wafers greatly increases after the SSCT method most probably due to the enlargement of the nanocrystalline Si band-gap. |
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