Ultra-low reflectivity polycrystalline silicon surfaces formed by surface structure chemical transfer method

• Main Authors: Imamura, Kentaro, Franco, Francisco, Jr., Matsumoto, Taketoshi, Kobayashi, Hikaru
• Format: text
• Published: Animo Repository 2013
• Subjects: Surface chemistry; Silicon; Chemistry
• Online Access: https://animorepository.dlsu.edu.ph/faculty_research/5898
• Institution: De La Salle University

A nanocrystalline Si layer can be formed by the surface structure chemical transfer (SSCT) method in which a platinum mesh is instantaneously contacted with polycrystalline Si wafers immersed in hydrogen peroxide plus hydrofluoric acid solutions. The polycrystalline Si surface after the SSCT method possesses an ultra-low reflectivity. The nanocrystalline Si layer possesses a 100–150 nm thickness, and gives a photoluminescence with a peak maximum at ∼670 nm, indicating band-gap widening. The minority carrier lifetime of as-sliced Si wafers greatly increases after the SSCT method most probably due to the enlargement of the nanocrystalline Si band-gap.