Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation

• المؤلفون الرئيسيون: Hewak, Dan W., Fedorenko, Yanina G., Lee, Tae-Hoon, Hughes, Mark A., Colaux, Julien L., Jeynes, C., Gwilliam, Russell M., Homewood, Kevin P., Yao, Jin, Elliott, Stephen R., Gholipour, B., Curry, Richard J.
• مؤلفون آخرون: Digonnet, Michel J. F.
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2014
• الموضوعات: DRNTU::Science
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/100033; http://hdl.handle.net/10220/19677
• المؤسسة: Nanyang Technological University

Doping of amorphous chalcogenide films of rather dissimilar bonding type and resistivity, namely, Ga-La-S, GeTe, and Ge-Sb-Te by means of ion implantation of bismuth is considered. To characterize defects induced by ionbeam implantation space-charge-limited conduction and capacitance-voltage charact...