Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation

Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation

Doping of amorphous chalcogenide films of rather dissimilar bonding type and resistivity, namely, Ga-La-S, GeTe, and Ge-Sb-Te by means of ion implantation of bismuth is considered. To characterize defects induced by ionbeam implantation space-charge-limited conduction and capacitance-voltage charact...

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書目詳細資料
Main Authors:	Hewak, Dan W., Fedorenko, Yanina G., Lee, Tae-Hoon, Hughes, Mark A., Colaux, Julien L., Jeynes, C., Gwilliam, Russell M., Homewood, Kevin P., Yao, Jin, Elliott, Stephen R., Gholipour, B., Curry, Richard J.
其他作者:	Digonnet, Michel J. F.
格式:	Conference or Workshop Item
語言:	English
出版:	2014
主題:	DRNTU::Science
在線閱讀:	https://hdl.handle.net/10356/100033 http://hdl.handle.net/10220/19677
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	Nanyang Technological University
語言:	English

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