A novel memristor-based rSRAM structure for multiple-bit upsets immunity

A radiation hardened resistive SRAM structure (rSRAM) is proposed for the SRAM-based FPGAs in this paper. The rSRAM extends the conventional 6T SRAM structure by connecting memristors between the information nodes and drains of the transistors which compose cross-coupled invertors. With memristors c...

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Bibliographic Details
Main Authors: Wang, Liyun, Zhang, Chun, Chen, Liguang, Lai, Jinmei, Tong, Jiarong
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/100285
http://hdl.handle.net/10220/16508
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Institution: Nanyang Technological University
Language: English