A novel memristor-based rSRAM structure for multiple-bit upsets immunity

• المؤلفون الرئيسيون: Wang, Liyun, Zhang, Chun, Chen, Liguang, Lai, Jinmei, Tong, Jiarong
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Applications of electronics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/100285; http://hdl.handle.net/10220/16508

A radiation hardened resistive SRAM structure (rSRAM) is proposed for the SRAM-based FPGAs in this paper. The rSRAM extends the conventional 6T SRAM structure by connecting memristors between the information nodes and drains of the transistors which compose cross-coupled invertors. With memristors c...