A novel memristor-based rSRAM structure for multiple-bit upsets immunity

• Main Authors: Wang, Liyun, Zhang, Chun, Chen, Liguang, Lai, Jinmei, Tong, Jiarong
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2013
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Applications of electronics
• 在線閱讀: https://hdl.handle.net/10356/100285; http://hdl.handle.net/10220/16508

A radiation hardened resistive SRAM structure (rSRAM) is proposed for the SRAM-based FPGAs in this paper. The rSRAM extends the conventional 6T SRAM structure by connecting memristors between the information nodes and drains of the transistors which compose cross-coupled invertors. With memristors c...