Characteristics of InGaAs quantum dot infrared photodetectors

• المؤلفون الرئيسيون: Xu, S. J., Chua, S. J., Mei, T., Wang, X. C., Zhang, X. H., Karunasiri, G., Fan, Weijun, Wang, C. H., Jiang, J., Wang, S., Xie, X. G.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: Electrical and Electronic Engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/100327; http://hdl.handle.net/10220/17871

A quantum dot infrared photodetector(QDIP) consisting of self-assembled InGaAs quantum dots has been demonstrated. Responsivity of 3.25 mA/W at 9.2 μm was obtained for nonpolarized incident light on the detector with a 45° angle facet at 60 K. The QDIPs exhibit some unique electro-opticcharacteristics such as a strong negative differential photoconductance effect and blueshift of the response peak wavelength.