Characteristics of InGaAs quantum dot infrared photodetectors

A quantum dot infrared photodetector(QDIP) consisting of self-assembled InGaAs quantum dots has been demonstrated. Responsivity of 3.25 mA/W at 9.2 μm was obtained for nonpolarized incident light on the detector with a 45° angle facet at 60 K. The QDIPs exhibit some unique electro-opticcharacteristi...

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Main Authors:	Xu, S. J., Chua, S. J., Mei, T., Wang, X. C., Zhang, X. H., Karunasiri, G., Fan, Weijun, Wang, C. H., Jiang, J., Wang, S., Xie, X. G.
Other Authors:	School of Electrical and Electronic Engineering
Format:	Article
Language:	English
Published:	2013
Subjects:	Electrical and Electronic Engineering
Online Access:	https://hdl.handle.net/10356/100327 http://hdl.handle.net/10220/17871
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Institution:	Nanyang Technological University
Language:	English

id	sg-ntu-dr.10356-100327
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spelling	sg-ntu-dr.10356-1003272020-03-07T14:00:31Z Characteristics of InGaAs quantum dot infrared photodetectors Xu, S. J. Chua, S. J. Mei, T. Wang, X. C. Zhang, X. H. Karunasiri, G. Fan, Weijun Wang, C. H. Jiang, J. Wang, S. Xie, X. G. School of Electrical and Electronic Engineering Institute of Materials Research and Engineering, National University of Singapore MBE Technology Pte Ltd., Singapore Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore Electrical and Electronic Engineering A quantum dot infrared photodetector(QDIP) consisting of self-assembled InGaAs quantum dots has been demonstrated. Responsivity of 3.25 mA/W at 9.2 μm was obtained for nonpolarized incident light on the detector with a 45° angle facet at 60 K. The QDIPs exhibit some unique electro-opticcharacteristics such as a strong negative differential photoconductance effect and blueshift of the response peak wavelength. Published version 2013-11-27T05:31:42Z 2019-12-06T20:20:37Z 2013-11-27T05:31:42Z 2019-12-06T20:20:37Z 1998 1998 Journal Article Xu, S. J., Chua, S. J., Mei, T., Wang, X. C., Zhang, X. H., Karunasiri, G., Fan, W., Wang, C. H., Jiang, J., Wang, S., & Xie, X. G. (1998). Characteristics of InGaAs quantum dot infrared photodetectors. Applied Physics Letters, 73(21), 3153. 0003-6951 https://hdl.handle.net/10356/100327 http://hdl.handle.net/10220/17871 10.1063/1.122703 en Applied physics letters © 1998 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.122703]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 3 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
country	Singapore
collection	DR-NTU
language	English
topic	Electrical and Electronic Engineering
spellingShingle	Electrical and Electronic Engineering Xu, S. J. Chua, S. J. Mei, T. Wang, X. C. Zhang, X. H. Karunasiri, G. Fan, Weijun Wang, C. H. Jiang, J. Wang, S. Xie, X. G. Characteristics of InGaAs quantum dot infrared photodetectors
description	A quantum dot infrared photodetector(QDIP) consisting of self-assembled InGaAs quantum dots has been demonstrated. Responsivity of 3.25 mA/W at 9.2 μm was obtained for nonpolarized incident light on the detector with a 45° angle facet at 60 K. The QDIPs exhibit some unique electro-opticcharacteristics such as a strong negative differential photoconductance effect and blueshift of the response peak wavelength.
author2	School of Electrical and Electronic Engineering
author_facet	School of Electrical and Electronic Engineering Xu, S. J. Chua, S. J. Mei, T. Wang, X. C. Zhang, X. H. Karunasiri, G. Fan, Weijun Wang, C. H. Jiang, J. Wang, S. Xie, X. G.
format	Article
author	Xu, S. J. Chua, S. J. Mei, T. Wang, X. C. Zhang, X. H. Karunasiri, G. Fan, Weijun Wang, C. H. Jiang, J. Wang, S. Xie, X. G.
author_sort	Xu, S. J.
title	Characteristics of InGaAs quantum dot infrared photodetectors
title_short	Characteristics of InGaAs quantum dot infrared photodetectors
title_full	Characteristics of InGaAs quantum dot infrared photodetectors
title_fullStr	Characteristics of InGaAs quantum dot infrared photodetectors
title_full_unstemmed	Characteristics of InGaAs quantum dot infrared photodetectors
title_sort	characteristics of ingaas quantum dot infrared photodetectors
publishDate	2013
url	https://hdl.handle.net/10356/100327 http://hdl.handle.net/10220/17871
_version_	1681047914341728256

Characteristics of InGaAs quantum dot infrared photodetectors

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