Comparison of nitrogen compositions in the as-grown GaN[sub x]As[sub 1−x] on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy
High-resolution x-ray diffraction (HRXRD) and secondary-ion mass spectroscopy were used to measure the N compositions of a series of as-grown GaNAs samples grown by solid-source molecular-beam epitaxy. We found that N compositions measured by the two methods agree well at lower N compositions (x<...
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| المؤلفون الرئيسيون: | , , , , , , |
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| مؤلفون آخرون: | |
| التنسيق: | مقال |
| اللغة: | English |
| منشور في: |
2013
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| الموضوعات: | |
| الوصول للمادة أونلاين: | https://hdl.handle.net/10356/100401 http://hdl.handle.net/10220/18003 |
| الوسوم: |
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| الملخص: | High-resolution x-ray diffraction (HRXRD) and secondary-ion mass spectroscopy were used to measure the N compositions of a series of as-grown GaNAs samples grown by solid-source molecular-beam epitaxy. We found that N compositions measured by the two methods agree well at lower N compositions (x<3%) and deviate at larger N (x>3%)compositions. The HRXRD measurement by using Vegard’s law to extract the lattice constant of GaNAs, underestimates N composition at larger N compositions. We found that the underestimation is up to 14.3% at the x=4.2%. In order to explain the deviation, a model for analyzing the correlation between lattice parameters and point defects in the epilayer was carried out. |
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