Comparison of nitrogen compositions in the as-grown GaN[sub x]As[sub 1−x] on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy
High-resolution x-ray diffraction (HRXRD) and secondary-ion mass spectroscopy were used to measure the N compositions of a series of as-grown GaNAs samples grown by solid-source molecular-beam epitaxy. We found that N compositions measured by the two methods agree well at lower N compositions (x<...
Saved in:
| Main Authors: | , , , , , , |
|---|---|
| 其他作者: | |
| 格式: | Article |
| 語言: | English |
| 出版: |
2013
|
| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/100401 http://hdl.handle.net/10220/18003 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
| 機構: | Nanyang Technological University |
| 語言: | English |
| 總結: | High-resolution x-ray diffraction (HRXRD) and secondary-ion mass spectroscopy were used to measure the N compositions of a series of as-grown GaNAs samples grown by solid-source molecular-beam epitaxy. We found that N compositions measured by the two methods agree well at lower N compositions (x<3%) and deviate at larger N (x>3%)compositions. The HRXRD measurement by using Vegard’s law to extract the lattice constant of GaNAs, underestimates N composition at larger N compositions. We found that the underestimation is up to 14.3% at the x=4.2%. In order to explain the deviation, a model for analyzing the correlation between lattice parameters and point defects in the epilayer was carried out. |
|---|