Comparison of nitrogen compositions in the as-grown GaN[sub x]As[sub 1−x] on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy

• المؤلفون الرئيسيون: Fan, Weijun, Yoon, Soon Fatt, Ng, T. K., Wang, S. Z., Loke, Wan Khai, Liu, R., Wee, A.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/100401; http://hdl.handle.net/10220/18003
• المؤسسة: Nanyang Technological University

High-resolution x-ray diffraction (HRXRD) and secondary-ion mass spectroscopy were used to measure the N compositions of a series of as-grown GaNAs samples grown by solid-source molecular-beam epitaxy. We found that N compositions measured by the two methods agree well at lower N compositions (x<3%) and deviate at larger N (x>3%)compositions. The HRXRD measurement by using Vegard’s law to extract the lattice constant of GaNAs, underestimates N composition at larger N compositions. We found that the underestimation is up to 14.3% at the x=4.2%. In order to explain the deviation, a model for analyzing the correlation between lattice parameters and point defects in the epilayer was carried out.