Comparison of nitrogen compositions in the as-grown GaN[sub x]As[sub 1−x] on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy

• المؤلفون الرئيسيون: Fan, Weijun, Yoon, Soon Fatt, Ng, T. K., Wang, S. Z., Loke, Wan Khai, Liu, R., Wee, A.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/100401; http://hdl.handle.net/10220/18003

High-resolution x-ray diffraction (HRXRD) and secondary-ion mass spectroscopy were used to measure the N compositions of a series of as-grown GaNAs samples grown by solid-source molecular-beam epitaxy. We found that N compositions measured by the two methods agree well at lower N compositions (x<...