Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2O3 dielectric gate stack

Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2O3 dielectric gate stack

We have studied the drain current dispersion characteristics of conventional AlGaN/GaN HEMTs and SiN/Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMT) fabricated on silicon substrate. The fabricated MISHEMT exhibited an IDmaxof >1000 mA/mm and gmmax of 241...

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Main Authors: Anand, M. J., Ng, G. I., Vicknesh, S., Arulkumaran, Subramaniam, Ranjan, K.
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2014
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Electric power
Online Access:https://hdl.handle.net/10356/100484
http://hdl.handle.net/10220/24127
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1004842020-03-07T12:47:08Z Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2O3 dielectric gate stack Anand, M. J. Ng, G. I. Vicknesh, S. Arulkumaran, Subramaniam Ranjan, K. School of Electrical and Electronic Engineering Research Techno Plaza Temasek Laboratories DRNTU::Engineering::Electrical and electronic engineering::Electric power We have studied the drain current dispersion characteristics of conventional AlGaN/GaN HEMTs and SiN/Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMT) fabricated on silicon substrate. The fabricated MISHEMT exhibited an IDmaxof >1000 mA/mm and gmmax of 241 mS/mm. Compared to conventional AlGaN/GaN HEMTs, about an order of magnitude lower gate leakage current and a ∼ 60% reduction in drain current (ID) collapse was observed in the MISHEMTs. The observation of low ID collapse is due to the occurrence of low interface state density (6.39 × 1010 eV-1 cm-2) between the bilayer dielectric (SiN/Al2O3) and GaN surface which is confirmed through the AC-conductance method. 2014-10-24T07:29:23Z 2019-12-06T20:23:18Z 2014-10-24T07:29:23Z 2019-12-06T20:23:18Z 2013 2013 Journal Article Anand, M. J., Ng, G. I., Vicknesh, S., Arulkumaran, S., & Ranjan, K. (2013). Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2O3 dielectric gate stack. Physica status solidi (c), 10(11), 1421-1425. 1862-6351 https://hdl.handle.net/10356/100484 http://hdl.handle.net/10220/24127 10.1002/pssc.201300219 en Physica status solidi (c) © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering::Electric power
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Electric power
Anand, M. J.
Ng, G. I.
Vicknesh, S.
Arulkumaran, Subramaniam
Ranjan, K.
Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2O3 dielectric gate stack
description We have studied the drain current dispersion characteristics of conventional AlGaN/GaN HEMTs and SiN/Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMT) fabricated on silicon substrate. The fabricated MISHEMT exhibited an IDmaxof >1000 mA/mm and gmmax of 241 mS/mm. Compared to conventional AlGaN/GaN HEMTs, about an order of magnitude lower gate leakage current and a ∼ 60% reduction in drain current (ID) collapse was observed in the MISHEMTs. The observation of low ID collapse is due to the occurrence of low interface state density (6.39 × 1010 eV-1 cm-2) between the bilayer dielectric (SiN/Al2O3) and GaN surface which is confirmed through the AC-conductance method.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Anand, M. J.
Ng, G. I.
Vicknesh, S.
Arulkumaran, Subramaniam
Ranjan, K.
format Article
author Anand, M. J.
Ng, G. I.
Vicknesh, S.
Arulkumaran, Subramaniam
Ranjan, K.
author_sort Anand, M. J.
title Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2O3 dielectric gate stack
title_short Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2O3 dielectric gate stack
title_full Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2O3 dielectric gate stack
title_fullStr Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2O3 dielectric gate stack
title_full_unstemmed Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2O3 dielectric gate stack
title_sort reduction of current collapse in algan/gan mishemt with bilayer sin/al2o3 dielectric gate stack
publishDate 2014
url https://hdl.handle.net/10356/100484
http://hdl.handle.net/10220/24127
_version_ 1681038866006409216

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