Study of interdiffusion in GaInNAs∕GaAs quantum well structure emitting at 1.3μm by eight-band k⋅p method

• المؤلفون الرئيسيون: Dang, Y. X., Fan, Weijun, Ng, S. T., Yoon, Soon Fatt, Zhang, Dao Hua
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Science::Physics::Atomic physics::Quantum theory
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/100604; http://hdl.handle.net/10220/17991
• المؤسسة: Nanyang Technological University

The interdiffusion effect of GaInNAs/GaAs single quantum well sQWd has been investigated with the eight-band k· p method. The as-grown 64-Å Ga0.64In0.36N0.017As0.983 /250-Å GaAs QW is experimentally determined to emit at 1.27 mm in the literature. The compositional profile of the QW after interdiffu...