Study of interdiffusion in GaInNAs∕GaAs quantum well structure emitting at 1.3μm by eight-band k⋅p method

• Main Authors: Dang, Y. X., Fan, Weijun, Ng, S. T., Yoon, Soon Fatt, Zhang, Dao Hua
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2013
• 主題: DRNTU::Science::Physics::Atomic physics::Quantum theory
• 在線閱讀: https://hdl.handle.net/10356/100604; http://hdl.handle.net/10220/17991

The interdiffusion effect of GaInNAs/GaAs single quantum well sQWd has been investigated with the eight-band k· p method. The as-grown 64-Å Ga0.64In0.36N0.017As0.983 /250-Å GaAs QW is experimentally determined to emit at 1.27 mm in the literature. The compositional profile of the QW after interdiffu...