Effect of linewidth scaling on hydrostatic stress in passivated interconnects

• Main Authors: Ang, Derrick, Ramanujan, Raju V.
• Other Authors: School of Materials Science & Engineering
• Format: Conference or Workshop Item
• Language: English
• Published: 2011
• Subjects: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects; DRNTU::Engineering::Materials::Material testing and characterization
• Online Access: https://hdl.handle.net/10356/100760; http://hdl.handle.net/10220/7303
• Institution: Nanyang Technological University

In this study, numerical work using ANSYS and analytical work based on Eshelby models are performed to examine the effect of linewidth scaling on the hydrostatic stress in passivated metal interconnects. Aluminium and copper interconnects of thickness 1 micron and linewidth ranging from 10 nanomete...