Intersubband transitions in InGaAsN/GaAs quantum wells

• Main Authors: Liu, W., Hou, X. Y., Jiang, Z. M., Zhang, Dao Hua, Fan, Weijun
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/100808; http://hdl.handle.net/10220/18167
• Institution: Nanyang Technological University

The dependences of intersubband transitions on well width and nitrogen N content in n-type In0.23Ga0.77As1−xNx /GaAs quantum wells QWs are investigated using a ten-band k·p model. The absorption peak energy is found to increase first with the well width starting from 2 nm. It becomes insensit...