Tuning InAs quantum dots for high areal density and wideband emission

• Main Authors: Ngo, C. Y., Chua, S. J., Yoon, Soon Fatt, Fan, Weijun
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2013
• 主題: Electrical and Electronic Engineering
• 在線閱讀: https://hdl.handle.net/10356/100821; http://hdl.handle.net/10220/18130
• 機構: Nanyang Technological University

The authors report the effect of growth temperature and monolayer coverage on areal density and photoluminescence spectral width of InAs quantum dot QD . Areal density and spectral width were found to be strongly dependent on growth temperature and monolayer coverage, respectively. Upon proper t...