Tuning InAs quantum dots for high areal density and wideband emission
The authors report the effect of growth temperature and monolayer coverage on areal density and photoluminescence spectral width of InAs quantum dot QD . Areal density and spectral width were found to be strongly dependent on growth temperature and monolayer coverage, respectively. Upon proper t...
Saved in:
| Main Authors: | , , , |
|---|---|
| 其他作者: | |
| 格式: | Article |
| 語言: | English |
| 出版: |
2013
|
| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/100821 http://hdl.handle.net/10220/18130 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
| 機構: | Nanyang Technological University |
| 語言: | English |
| 總結: | The authors report the effect of growth temperature and monolayer coverage on areal density and
photoluminescence spectral width of InAs quantum dot QD . Areal density and spectral width were
found to be strongly dependent on growth temperature and monolayer coverage, respectively. Upon
proper tuning, both high areal density and large photoluminescence spectral width were obtained.
Areal density of 1.5 1011 cm−2 is four times higher than those previously reported, while spectral
width of 136 nm is the broadest spectral width obtained without any forms of band gap engineering.
These results will contribute to an improvement in the performance of QD superluminescent
diode. |
|---|