Trap levels in graphene oxide : a thermally stimulated current study

• المؤلفون الرئيسيون: Kajen, R. S., Pey, K. L., Vijila, C., Jaiswal, M., Saravanan, S., Ng, A. M. H., Wong, C. P., Loh, K. P., Chandrasekhar, Natarajan
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2014
• الموضوعات: DRNTU::Engineering::Mathematics and analysis::Simulations
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/100949; http://hdl.handle.net/10220/18598
• المؤسسة: Nanyang Technological University

We report thermally stimulated current (TSC) experiments on graphene oxide (GO) to study the effects of various defect levels near the GO Fermi level. The TSC peaks are ascribed to detrapping from defect levels to the GO hopping transport energy level, and are found to be in agreement with the GO de...