High-performance partially aligned semiconductive single-walled carbon nanotube transistors achieved with a parallel technique
Single-walled carbon nanotubes (SWNTs) are widely thought to be a strong contender for next-generation printed electronic transistor materials. However, large-scale solution-based parallel assembly of SWNTs to obtain high-performance transistor devices is challenging. SWNTs have anisotropic properti...
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Main Authors: | , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2014
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/100966 http://hdl.handle.net/10220/19009 |
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Institution: | Nanyang Technological University |
Language: | English |