Charging effect on current conduction in aluminum nitride thin films containing Al nanocrystals

Charging effect on current conduction in aluminum nitride thin films containing Al nanocrystals

The presence of Al nanocrystals (nc-Al) in AlN thin films is found to enhance the current conduction of the thin film system greatly due to the formation of tunneling paths of nc-Al arrays, and the nc-Al/AlN system shows a quasi-two-dimensional transport following a power law. However, charge trappi...

Full description

Saved in:
Bibliographic Details
Main Authors: Liu, Yang, Chen, Tupei, Lau, Hon Wu, Wong, Jen It, Ding, Liang, Zhang, Sam, Fung, Stevenson Hon Yuen
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2010
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
Online Access:https://hdl.handle.net/10356/101045
http://hdl.handle.net/10220/6411
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
Description
Summary:The presence of Al nanocrystals (nc-Al) in AlN thin films is found to enhance the current conduction of the thin film system greatly due to the formation of tunneling paths of nc-Al arrays, and the nc-Al/AlN system shows a quasi-two-dimensional transport following a power law. However, charge trapping in nc-Al reduces the current conduction because of the increase in the tunneling resistance and/or the breaking of some tunneling paths due to Coulomb blockade effect. The current conduction also evolves with a trend towards one-dimensional transport due to the breaking of some transverse tunneling paths as a result of the charge trapping.

Similar Items