Vapor–liquid–solid growth of endotaxial semiconductor nanowires
Free-standing and in-plane lateral nanowires (NWs) grown by the vapor–liquid–solid (VLS) process have been widely reported. Herein, we demonstrate that the VLS method can be extended to the synthesis of horizontally aligned semiconductor NWs embedded in substrates. Endotaxial SiGe NWs were grown in...
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sg-ntu-dr.10356-1010892020-06-01T10:26:48Z Vapor–liquid–solid growth of endotaxial semiconductor nanowires Li, Shaozhou Huang, Xiao Liu, Qing Cao, Xiehong Huo, Fengwei Zhang, Hua Gan, Chee Lip School of Materials Science & Engineering Free-standing and in-plane lateral nanowires (NWs) grown by the vapor–liquid–solid (VLS) process have been widely reported. Herein, we demonstrate that the VLS method can be extended to the synthesis of horizontally aligned semiconductor NWs embedded in substrates. Endotaxial SiGe NWs were grown in silicon substrates by tuning the directional movement of the catalyst in the substrates. The location of the SiGe NWs can be controlled by the SiO2 pattern on the silicon surface. By varying the growth conditions, the proportion of Ge in the obtained NWs can also be tuned. This approach opens up an opportunity for the spatial control of the NW growth in substrates and can potentially broaden the applications of NWs in new advanced fields. 2013-07-10T04:07:35Z 2019-12-06T20:33:15Z 2013-07-10T04:07:35Z 2019-12-06T20:33:15Z 2012 2012 Journal Article Li, S., Huang, X., Lui, Q., Cao, X., Huo, F., Zhang, H., et al. (2012). Vapor–liquid–solid growth of endotaxial semiconductor nanowires. Nano Letters, 12(11), 5565-5570. https://hdl.handle.net/10356/101089 http://hdl.handle.net/10220/11095 10.1021/nl3025196 en Nano letters © 2012 American Chemical Society. |
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Free-standing and in-plane lateral nanowires (NWs) grown by the vapor–liquid–solid (VLS) process have been widely reported. Herein, we demonstrate that the VLS method can be extended to the synthesis of horizontally aligned semiconductor NWs embedded in substrates. Endotaxial SiGe NWs were grown in silicon substrates by tuning the directional movement of the catalyst in the substrates. The location of the SiGe NWs can be controlled by the SiO2 pattern on the silicon surface. By varying the growth conditions, the proportion of Ge in the obtained NWs can also be tuned. This approach opens up an opportunity for the spatial control of the NW growth in substrates and can potentially broaden the applications of NWs in new advanced fields. |
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School of Materials Science & Engineering |
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School of Materials Science & Engineering Li, Shaozhou Huang, Xiao Liu, Qing Cao, Xiehong Huo, Fengwei Zhang, Hua Gan, Chee Lip |
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Li, Shaozhou Huang, Xiao Liu, Qing Cao, Xiehong Huo, Fengwei Zhang, Hua Gan, Chee Lip |
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Li, Shaozhou Huang, Xiao Liu, Qing Cao, Xiehong Huo, Fengwei Zhang, Hua Gan, Chee Lip Vapor–liquid–solid growth of endotaxial semiconductor nanowires |
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Li, Shaozhou |
title |
Vapor–liquid–solid growth of endotaxial semiconductor nanowires |
title_short |
Vapor–liquid–solid growth of endotaxial semiconductor nanowires |
title_full |
Vapor–liquid–solid growth of endotaxial semiconductor nanowires |
title_fullStr |
Vapor–liquid–solid growth of endotaxial semiconductor nanowires |
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Vapor–liquid–solid growth of endotaxial semiconductor nanowires |
title_sort |
vapor–liquid–solid growth of endotaxial semiconductor nanowires |
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2013 |
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https://hdl.handle.net/10356/101089 http://hdl.handle.net/10220/11095 |
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