Vapor–liquid–solid growth of endotaxial semiconductor nanowires

• المؤلفون الرئيسيون: Li, Shaozhou, Huang, Xiao, Liu, Qing, Cao, Xiehong, Huo, Fengwei, Zhang, Hua, Gan, Chee Lip
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/101089; http://hdl.handle.net/10220/11095

Free-standing and in-plane lateral nanowires (NWs) grown by the vapor–liquid–solid (VLS) process have been widely reported. Herein, we demonstrate that the VLS method can be extended to the synthesis of horizontally aligned semiconductor NWs embedded in substrates. Endotaxial SiGe NWs were grown in...