Excitonic bandgap dependence on stacking configuration in four layer graphene

Excitonic bandgap dependence on stacking configuration in four layer graphene

Different crystallographic stacking configurations in graphene provide an additional degree of freedom in the electronic structure. We have conducted systematic investigations of the transport properties of ABAB- and ABCA-stacked four-layer graphene. Our results reveal that ABAB and ABCA graphene ex...

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Bibliographic Details
Main Authors: Goolaup, Sarjoosing, Lew, Wen Siang, Purnama, Indra, Sekhar, Murapaka Chandra, Liu, Y. P., Zhou, T. J., Wong, S. K.
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2014
Subjects:
DRNTU::Science::Physics
Online Access:https://hdl.handle.net/10356/101290
http://hdl.handle.net/10220/18386
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Institution: Nanyang Technological University
Language: English
Description
Summary:Different crystallographic stacking configurations in graphene provide an additional degree of freedom in the electronic structure. We have conducted systematic investigations of the transport properties of ABAB- and ABCA-stacked four-layer graphene. Our results reveal that ABAB and ABCA graphene exhibit markedly different properties as functions of both temperature and magnetic field. The temperature-dependant resistance measurement reveals that the excitonic gap of ABCA stacked graphene increases as a function of temperature, while for ABAB, a shrinking excitonic gap configuration is observed.

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