Excitonic bandgap dependence on stacking configuration in four layer graphene
Different crystallographic stacking configurations in graphene provide an additional degree of freedom in the electronic structure. We have conducted systematic investigations of the transport properties of ABAB- and ABCA-stacked four-layer graphene. Our results reveal that ABAB and ABCA graphene ex...
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sg-ntu-dr.10356-1012902023-02-28T19:37:48Z Excitonic bandgap dependence on stacking configuration in four layer graphene Goolaup, Sarjoosing Lew, Wen Siang Purnama, Indra Sekhar, Murapaka Chandra Liu, Y. P. Zhou, T. J. Wong, S. K. School of Physical and Mathematical Sciences DRNTU::Science::Physics Different crystallographic stacking configurations in graphene provide an additional degree of freedom in the electronic structure. We have conducted systematic investigations of the transport properties of ABAB- and ABCA-stacked four-layer graphene. Our results reveal that ABAB and ABCA graphene exhibit markedly different properties as functions of both temperature and magnetic field. The temperature-dependant resistance measurement reveals that the excitonic gap of ABCA stacked graphene increases as a function of temperature, while for ABAB, a shrinking excitonic gap configuration is observed. Published version 2014-01-03T04:24:20Z 2019-12-06T20:36:10Z 2014-01-03T04:24:20Z 2019-12-06T20:36:10Z 2013 2013 Journal Article Liu, Y. P., Goolaup, S., Lew, W. S., Purnama, I., Sekhar, M. C., Zhou, T. J., et al. (2013). Excitonic bandgap dependence on stacking configuration in four layer graphene. Applied physics letters, 103(16), 163108-. 0003-6951 https://hdl.handle.net/10356/101290 http://hdl.handle.net/10220/18386 10.1063/1.4825263 en Applied physics letters © 2013 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4825263]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf |
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DRNTU::Science::Physics Goolaup, Sarjoosing Lew, Wen Siang Purnama, Indra Sekhar, Murapaka Chandra Liu, Y. P. Zhou, T. J. Wong, S. K. Excitonic bandgap dependence on stacking configuration in four layer graphene |
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Different crystallographic stacking configurations in graphene provide an additional degree of freedom in the electronic structure. We have conducted systematic investigations of the transport properties of ABAB- and ABCA-stacked four-layer graphene. Our results reveal that ABAB and ABCA graphene exhibit markedly different properties as functions of both temperature and magnetic field. The temperature-dependant resistance measurement reveals that the excitonic gap of ABCA stacked graphene increases as a function of temperature, while for ABAB, a shrinking excitonic gap configuration is observed. |
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School of Physical and Mathematical Sciences |
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School of Physical and Mathematical Sciences Goolaup, Sarjoosing Lew, Wen Siang Purnama, Indra Sekhar, Murapaka Chandra Liu, Y. P. Zhou, T. J. Wong, S. K. |
format |
Article |
author |
Goolaup, Sarjoosing Lew, Wen Siang Purnama, Indra Sekhar, Murapaka Chandra Liu, Y. P. Zhou, T. J. Wong, S. K. |
author_sort |
Goolaup, Sarjoosing |
title |
Excitonic bandgap dependence on stacking configuration in four layer graphene |
title_short |
Excitonic bandgap dependence on stacking configuration in four layer graphene |
title_full |
Excitonic bandgap dependence on stacking configuration in four layer graphene |
title_fullStr |
Excitonic bandgap dependence on stacking configuration in four layer graphene |
title_full_unstemmed |
Excitonic bandgap dependence on stacking configuration in four layer graphene |
title_sort |
excitonic bandgap dependence on stacking configuration in four layer graphene |
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2014 |
url |
https://hdl.handle.net/10356/101290 http://hdl.handle.net/10220/18386 |
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1759856822017064960 |