A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures

• Main Authors: Vexler, M. I., Tyaginov, S. E., Illarionov, Yu. Yu., Sing, Yew Kwang., Shenp, Ang Diing., Fedorov, V. V., Isakov, D. V.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: https://hdl.handle.net/10356/101316; http://hdl.handle.net/10220/16733
• Institution: Nanyang Technological University

The algorithm is suggested for calculating the I–V characteristics of a voltage- or current-controlled metal-tunnel-thin insulator-semiconductor system. The basic underlying physical models are discussed. Applicability of the algorithm is confirmed by a comparison of the simulation results with the...