A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures

The algorithm is suggested for calculating the I–V characteristics of a voltage- or current-controlled metal-tunnel-thin insulator-semiconductor system. The basic underlying physical models are discussed. Applicability of the algorithm is confirmed by a comparison of the simulation results with the...

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Bibliographic Details
Main Authors: Vexler, M. I., Tyaginov, S. E., Illarionov, Yu. Yu., Sing, Yew Kwang., Shenp, Ang Diing., Fedorov, V. V., Isakov, D. V.
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/101316
http://hdl.handle.net/10220/16733
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Institution: Nanyang Technological University
Language: English