A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures
The algorithm is suggested for calculating the I–V characteristics of a voltage- or current-controlled metal-tunnel-thin insulator-semiconductor system. The basic underlying physical models are discussed. Applicability of the algorithm is confirmed by a comparison of the simulation results with the...
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| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/101316 http://hdl.handle.net/10220/16733 |
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| Institution: | Nanyang Technological University |
| Language: | English |