A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures

A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures

The algorithm is suggested for calculating the I–V characteristics of a voltage- or current-controlled metal-tunnel-thin insulator-semiconductor system. The basic underlying physical models are discussed. Applicability of the algorithm is confirmed by a comparison of the simulation results with the...

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書目詳細資料
Main Authors:	Vexler, M. I., Tyaginov, S. E., Illarionov, Yu. Yu., Sing, Yew Kwang., Shenp, Ang Diing., Fedorov, V. V., Isakov, D. V.
其他作者:	School of Electrical and Electronic Engineering
格式:	Article
語言:	English
出版:	2013
主題:	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
在線閱讀:	https://hdl.handle.net/10356/101316 http://hdl.handle.net/10220/16733
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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