Ge-on-insulator lateral p-i-n waveguide photodetectors for optical communication

• المؤلفون الرئيسيون: Cheng, Chin-Yuan, Tsai, Cheng-Hsun, Yeh, Po-Lun, Hung, Sheng-Feng, Bao, Shuyu, Lee, Kwang Hong, Tan, Chuan Seng, Chang, Guo-En
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2020
• الموضوعات: Engineering::Electrical and electronic engineering::Semiconductors; Germanium; Photodetector
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/145188
• المؤسسة: Nanyang Technological University

We report high-performance lateral p-i-n Ge waveguide photodetectors (WGPDs) on a Ge-on-insulator (GOI) platform that could be integrated with electronic-photonic integrated circuits (EPICs) for communication applications. The high quality Ge layer affords a low absolute dark current. A tensile stra...