A new model of stacked transformers considering skin and substrate effects

A new model of stacked transformers considering skin and substrate effects

A compact model for 1:1 stacked transformers fabricated in silicon IC technology has been developed. The skin and substrate effects are taken into account in the model. The model parameters are extracted from the layout and the process technology specifications. The proposed model is verified by mea...

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Main Authors: Zhao, Qian, Liu, Jun, Yu, Zhiping, Sun, Lingling, Yu, Hao
Other Authors: School of Electrical and Electronic Engineering
Format: Conference or Workshop Item
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/101489
http://hdl.handle.net/10220/16273
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1014892020-03-07T13:24:50Z A new model of stacked transformers considering skin and substrate effects Zhao, Qian Liu, Jun Yu, Zhiping Sun, Lingling Yu, Hao School of Electrical and Electronic Engineering IEEE International Conference on Solid-State and Integrated Circuit Technology (11th : 2012 : Xi'an, China) DRNTU::Engineering::Electrical and electronic engineering A compact model for 1:1 stacked transformers fabricated in silicon IC technology has been developed. The skin and substrate effects are taken into account in the model. The model parameters are extracted from the layout and the process technology specifications. The proposed model is verified by measured S-parameters up to 40 GHz. The simulated S-parameters, quality factor Q, coil inductance and magnetic coupling coefficient, all show excellent agreement with measured data over the entire frequency range. 2013-10-04T06:36:02Z 2019-12-06T20:39:12Z 2013-10-04T06:36:02Z 2019-12-06T20:39:12Z 2012 2012 Conference Paper Zhao, Q., Liu, J., Yu, Z., Sun, L., & Yu, H. (2012). A new model of stacked transformers considering skin and substrate effects. 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT). https://hdl.handle.net/10356/101489 http://hdl.handle.net/10220/16273 10.1109/ICSICT.2012.6467680 en
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Zhao, Qian
Liu, Jun
Yu, Zhiping
Sun, Lingling
Yu, Hao
A new model of stacked transformers considering skin and substrate effects
description A compact model for 1:1 stacked transformers fabricated in silicon IC technology has been developed. The skin and substrate effects are taken into account in the model. The model parameters are extracted from the layout and the process technology specifications. The proposed model is verified by measured S-parameters up to 40 GHz. The simulated S-parameters, quality factor Q, coil inductance and magnetic coupling coefficient, all show excellent agreement with measured data over the entire frequency range.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Zhao, Qian
Liu, Jun
Yu, Zhiping
Sun, Lingling
Yu, Hao
format Conference or Workshop Item
author Zhao, Qian
Liu, Jun
Yu, Zhiping
Sun, Lingling
Yu, Hao
author_sort Zhao, Qian
title A new model of stacked transformers considering skin and substrate effects
title_short A new model of stacked transformers considering skin and substrate effects
title_full A new model of stacked transformers considering skin and substrate effects
title_fullStr A new model of stacked transformers considering skin and substrate effects
title_full_unstemmed A new model of stacked transformers considering skin and substrate effects
title_sort new model of stacked transformers considering skin and substrate effects
publishDate 2013
url https://hdl.handle.net/10356/101489
http://hdl.handle.net/10220/16273
_version_ 1681049852932259840

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