Highly enhanced exciton recombination rate by strong electron–phonon coupling in single ZnTe nanobelt

• Main Authors: Zhang, Qing, Liu, Xinfeng, Bakti Utama, Muhammad Iqbal, Zhang, Jun, Mata, Maria de la, Arbiol, Jordi, Lu, Yuhao, Sum, Tze Chien, Xiong, Qihua
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Online Access: https://hdl.handle.net/10356/101583; http://hdl.handle.net/10220/11121
• Institution: Nanyang Technological University

Electron–phonon coupling plays a key role in a variety of elemental excitations and their interactions in semiconductor nanostructures. Here we demonstrate that the relaxation rate of free excitons in a single ZnTe nanobelt (NB) is considerably enhanced via a nonthermalized hot-exciton emission proc...