Polarity assignment in ZnTe, GaAs, ZnO, and GaN-AlN nanowires from direct dumbbell analysis

• المؤلفون الرئيسيون: Fernández-Rojas, Carlos J., Morral, Anna Fontcuberta i., Mata, Maria de la, Magen, Cesar, Gazquez, Jaume, Utama, Muhammad Iqbal Bakti, Heiss, Martin, Lopatin, Sergei, Furtmayr, Florian, Peng, Bo, Morante, Joan Ramon, Rurali, Riccardo, Eickhoff, Martin, Xiong, Qihua, Arbiol, Jordi
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/97522; http://hdl.handle.net/10220/10703
• المؤسسة: Nanyang Technological University

Aberration corrected scanning transmission electron microscopy (STEM) with high angle annular dark field (HAADF) imaging and the newly developed annular bright field (ABF) imaging are used to define a new guideline for the polarity determination of semiconductor nanowires (NWs) from binary compounds...