Polarity assignment in ZnTe, GaAs, ZnO, and GaN-AlN nanowires from direct dumbbell analysis

• Main Authors: Fernández-Rojas, Carlos J., Morral, Anna Fontcuberta i., Mata, Maria de la, Magen, Cesar, Gazquez, Jaume, Utama, Muhammad Iqbal Bakti, Heiss, Martin, Lopatin, Sergei, Furtmayr, Florian, Peng, Bo, Morante, Joan Ramon, Rurali, Riccardo, Eickhoff, Martin, Xiong, Qihua, Arbiol, Jordi
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Online Access: https://hdl.handle.net/10356/97522; http://hdl.handle.net/10220/10703
• Institution: Nanyang Technological University

Aberration corrected scanning transmission electron microscopy (STEM) with high angle annular dark field (HAADF) imaging and the newly developed annular bright field (ABF) imaging are used to define a new guideline for the polarity determination of semiconductor nanowires (NWs) from binary compounds...