Controlled electroluminescence of n-ZnMgO/p-GaN light-emitting diodes

• Main Authors: Yang, H. Y., Han, Z. J., Ostrikov, K., Goh, Eunice S. M., Chen, Tupei
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2014
• Subjects: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
• Online Access: https://hdl.handle.net/10356/100679; http://hdl.handle.net/10220/18580
• Institution: Nanyang Technological University

Effective control of room-temperature electroluminescence of n-ZnMgO/p-GaN light-emitting diodes(LEDs) over both emission intensity and wavelength is demonstrated. With varied Mg concentration, the intensity of LEDs in the near-ultraviolet region is increased due to the effective radiative recombina...