Controlled electroluminescence of n-ZnMgO/p-GaN light-emitting diodes

Effective control of room-temperature electroluminescence of n-ZnMgO/p-GaN light-emitting diodes(LEDs) over both emission intensity and wavelength is demonstrated. With varied Mg concentration, the intensity of LEDs in the near-ultraviolet region is increased due to the effective radiative recombina...

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Main Authors:	Yang, H. Y., Han, Z. J., Ostrikov, K., Goh, Eunice S. M., Chen, Tupei
Other Authors:	School of Electrical and Electronic Engineering
Format:	Article
Language:	English
Published:	2014
Subjects:	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Online Access:	https://hdl.handle.net/10356/100679 http://hdl.handle.net/10220/18580
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Institution:	Nanyang Technological University
Language:	English

id	sg-ntu-dr.10356-100679
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spelling	sg-ntu-dr.10356-1006792020-03-07T14:00:31Z Controlled electroluminescence of n-ZnMgO/p-GaN light-emitting diodes Yang, H. Y. Han, Z. J. Ostrikov, K. Goh, Eunice S. M. Chen, Tupei School of Electrical and Electronic Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Effective control of room-temperature electroluminescence of n-ZnMgO/p-GaN light-emitting diodes(LEDs) over both emission intensity and wavelength is demonstrated. With varied Mg concentration, the intensity of LEDs in the near-ultraviolet region is increased due to the effective radiative recombination in the ZnMgO layer. Furthermore, the emission wavelength is shifted to the green/yellow spectral region by employing an indium-tin-oxide thin film as the dopant source, where thermally activated indium diffusion creates extra deep defect levels for carrier recombination. These results clearly demonstrate the effectiveness of controlled metal incorporation in achieving high energy efficiency and spectral tunability of the n-ZnMgO/p-GaN LED devices. Published version 2014-01-14T03:16:18Z 2019-12-06T20:26:27Z 2014-01-14T03:16:18Z 2019-12-06T20:26:27Z 2012 2012 Journal Article Goh, E. S. M., Yang, H. Y., Han, Z. J., Chen, T., & Ostrikov, K. (2012). Controlled electroluminescence of n-ZnMgO/p-GaN light-emitting diodes. Applied physics letters, 101(26), 263506-. 0003-6951 https://hdl.handle.net/10356/100679 http://hdl.handle.net/10220/18580 10.1063/1.4773367 en Applied physics letters © 2012 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: http://dx.doi.org/10.1063/1.4773367 . One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law." 5 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
country	Singapore
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
spellingShingle	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Yang, H. Y. Han, Z. J. Ostrikov, K. Goh, Eunice S. M. Chen, Tupei Controlled electroluminescence of n-ZnMgO/p-GaN light-emitting diodes
description	Effective control of room-temperature electroluminescence of n-ZnMgO/p-GaN light-emitting diodes(LEDs) over both emission intensity and wavelength is demonstrated. With varied Mg concentration, the intensity of LEDs in the near-ultraviolet region is increased due to the effective radiative recombination in the ZnMgO layer. Furthermore, the emission wavelength is shifted to the green/yellow spectral region by employing an indium-tin-oxide thin film as the dopant source, where thermally activated indium diffusion creates extra deep defect levels for carrier recombination. These results clearly demonstrate the effectiveness of controlled metal incorporation in achieving high energy efficiency and spectral tunability of the n-ZnMgO/p-GaN LED devices.
author2	School of Electrical and Electronic Engineering
author_facet	School of Electrical and Electronic Engineering Yang, H. Y. Han, Z. J. Ostrikov, K. Goh, Eunice S. M. Chen, Tupei
format	Article
author	Yang, H. Y. Han, Z. J. Ostrikov, K. Goh, Eunice S. M. Chen, Tupei
author_sort	Yang, H. Y.
title	Controlled electroluminescence of n-ZnMgO/p-GaN light-emitting diodes
title_short	Controlled electroluminescence of n-ZnMgO/p-GaN light-emitting diodes
title_full	Controlled electroluminescence of n-ZnMgO/p-GaN light-emitting diodes
title_fullStr	Controlled electroluminescence of n-ZnMgO/p-GaN light-emitting diodes
title_full_unstemmed	Controlled electroluminescence of n-ZnMgO/p-GaN light-emitting diodes
title_sort	controlled electroluminescence of n-znmgo/p-gan light-emitting diodes
publishDate	2014
url	https://hdl.handle.net/10356/100679 http://hdl.handle.net/10220/18580
_version_	1681043924964081664

Controlled electroluminescence of n-ZnMgO/p-GaN light-emitting diodes

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