A low power millimetre-wave VCO in 0.18 µm SiGe BiCMOS technology

A 36 GHz low power voltage controlled oscillator (VCO) is proposed and designed in 0.18 μm SiGe BiCMOS process. The VCO core part adopts a triple coupled transformer to provide feedbacks and to decouple the base voltage from the collector of the bipolar transistors, such that the voltage swing and p...

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Main Authors: Ye, Wanxin, Yeo, Kiat Seng, Zou, Qiong, Ma, Kaixue
Other Authors: School of Electrical and Electronic Engineering
Format: Conference or Workshop Item
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/101586
http://hdl.handle.net/10220/16337
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1015862020-03-07T13:24:50Z A low power millimetre-wave VCO in 0.18 µm SiGe BiCMOS technology Ye, Wanxin Yeo, Kiat Seng Zou, Qiong Ma, Kaixue School of Electrical and Electronic Engineering IEEE Asia Pacific Conference on Circuits and Systems (2012 : Kaohsiung, Taiwan) DRNTU::Engineering::Electrical and electronic engineering A 36 GHz low power voltage controlled oscillator (VCO) is proposed and designed in 0.18 μm SiGe BiCMOS process. The VCO core part adopts a triple coupled transformer to provide feedbacks and to decouple the base voltage from the collector of the bipolar transistors, such that the voltage swing and phase noise can be improved. Besides, a transformer-based buffer is used to reduce the total power consumption of the design and provide matching. From the simulation results, the proposed VCO achieves low phase noise from -95 to -102.2dBc/Hz at 1MHz offset from the oscillation frequency while consumes only 5.76 mW DC power for the whole chip. 2013-10-10T02:48:35Z 2019-12-06T20:40:54Z 2013-10-10T02:48:35Z 2019-12-06T20:40:54Z 2012 2012 Conference Paper Zou, Q., Ma, K., Ye, W., & Yeo, K. S. (2012). A low power millimetre-wave VCO in 0.18 µm SiGe BiCMOS technology. 2012 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS), pp.244-247. https://hdl.handle.net/10356/101586 http://hdl.handle.net/10220/16337 10.1109/APCCAS.2012.6419017 en
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Ye, Wanxin
Yeo, Kiat Seng
Zou, Qiong
Ma, Kaixue
A low power millimetre-wave VCO in 0.18 µm SiGe BiCMOS technology
description A 36 GHz low power voltage controlled oscillator (VCO) is proposed and designed in 0.18 μm SiGe BiCMOS process. The VCO core part adopts a triple coupled transformer to provide feedbacks and to decouple the base voltage from the collector of the bipolar transistors, such that the voltage swing and phase noise can be improved. Besides, a transformer-based buffer is used to reduce the total power consumption of the design and provide matching. From the simulation results, the proposed VCO achieves low phase noise from -95 to -102.2dBc/Hz at 1MHz offset from the oscillation frequency while consumes only 5.76 mW DC power for the whole chip.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Ye, Wanxin
Yeo, Kiat Seng
Zou, Qiong
Ma, Kaixue
format Conference or Workshop Item
author Ye, Wanxin
Yeo, Kiat Seng
Zou, Qiong
Ma, Kaixue
author_sort Ye, Wanxin
title A low power millimetre-wave VCO in 0.18 µm SiGe BiCMOS technology
title_short A low power millimetre-wave VCO in 0.18 µm SiGe BiCMOS technology
title_full A low power millimetre-wave VCO in 0.18 µm SiGe BiCMOS technology
title_fullStr A low power millimetre-wave VCO in 0.18 µm SiGe BiCMOS technology
title_full_unstemmed A low power millimetre-wave VCO in 0.18 µm SiGe BiCMOS technology
title_sort low power millimetre-wave vco in 0.18 µm sige bicmos technology
publishDate 2013
url https://hdl.handle.net/10356/101586
http://hdl.handle.net/10220/16337
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