Room temperature magnetic graphene oxide- iron oxide nanocomposite based magnetoresistive random access memory devices via spin-dependent trapping of electrons

Room temperature magnetic graphene oxide- iron oxide nanocomposite based magnetoresistive random access memory devices via spin-dependent trapping of electrons

A MRAM device is fabricated using magnetic graphene oxide- iron oxide nanoparticles nanocomposites together with a platinum electrode and a ferromagnetic cobalt electrode. The device allow for a positive magnetoresistance up to 280% via the spin-dependent trapping of charge carriers. Its low resista...

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Main Authors: Lin, Aigu L., Peng, Haiyang, Liu, Zhiqi, Wu, Tom, Su, Chenliang, Loh, Kian Ping, Ariando, Chen, Wei, Wee, Andrew T. S.
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2014
Subjects:
DRNTU::Science::Chemistry
Online Access:https://hdl.handle.net/10356/101677
http://hdl.handle.net/10220/19751
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1016772020-03-07T12:34:53Z Room temperature magnetic graphene oxide- iron oxide nanocomposite based magnetoresistive random access memory devices via spin-dependent trapping of electrons Lin, Aigu L. Peng, Haiyang Liu, Zhiqi Wu, Tom Su, Chenliang Loh, Kian Ping Ariando Chen, Wei Wee, Andrew T. S. School of Physical and Mathematical Sciences DRNTU::Science::Chemistry A MRAM device is fabricated using magnetic graphene oxide- iron oxide nanoparticles nanocomposites together with a platinum electrode and a ferromagnetic cobalt electrode. The device allow for a positive magnetoresistance up to 280% via the spin-dependent trapping of charge carriers. Its low resistance state can be restored by releasing the trapped charges by reversing the direction of current flow together with the magnetic field orientation. 2014-06-13T04:17:47Z 2019-12-06T20:42:39Z 2014-06-13T04:17:47Z 2019-12-06T20:42:39Z 2014 2014 Journal Article Lin, A. L., Peng, H., Liu, Z., Wu, T., Su, C., Loh, K. P., et al. (2014). Room Temperature Magnetic Graphene Oxide- Iron Oxide Nanocomposite Based Magnetoresistive Random Access Memory Devices via Spin-Dependent Trapping of Electrons. Small, 10(10), 1945–1952. 1613-6810 https://hdl.handle.net/10356/101677 http://hdl.handle.net/10220/19751 10.1002/smll.201302986 en Small © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Science::Chemistry
spellingShingle DRNTU::Science::Chemistry
Lin, Aigu L.
Peng, Haiyang
Liu, Zhiqi
Wu, Tom
Su, Chenliang
Loh, Kian Ping
Ariando
Chen, Wei
Wee, Andrew T. S.
Room temperature magnetic graphene oxide- iron oxide nanocomposite based magnetoresistive random access memory devices via spin-dependent trapping of electrons
description A MRAM device is fabricated using magnetic graphene oxide- iron oxide nanoparticles nanocomposites together with a platinum electrode and a ferromagnetic cobalt electrode. The device allow for a positive magnetoresistance up to 280% via the spin-dependent trapping of charge carriers. Its low resistance state can be restored by releasing the trapped charges by reversing the direction of current flow together with the magnetic field orientation.
author2 School of Physical and Mathematical Sciences
author_facet School of Physical and Mathematical Sciences
Lin, Aigu L.
Peng, Haiyang
Liu, Zhiqi
Wu, Tom
Su, Chenliang
Loh, Kian Ping
Ariando
Chen, Wei
Wee, Andrew T. S.
format Article
author Lin, Aigu L.
Peng, Haiyang
Liu, Zhiqi
Wu, Tom
Su, Chenliang
Loh, Kian Ping
Ariando
Chen, Wei
Wee, Andrew T. S.
author_sort Lin, Aigu L.
title Room temperature magnetic graphene oxide- iron oxide nanocomposite based magnetoresistive random access memory devices via spin-dependent trapping of electrons
title_short Room temperature magnetic graphene oxide- iron oxide nanocomposite based magnetoresistive random access memory devices via spin-dependent trapping of electrons
title_full Room temperature magnetic graphene oxide- iron oxide nanocomposite based magnetoresistive random access memory devices via spin-dependent trapping of electrons
title_fullStr Room temperature magnetic graphene oxide- iron oxide nanocomposite based magnetoresistive random access memory devices via spin-dependent trapping of electrons
title_full_unstemmed Room temperature magnetic graphene oxide- iron oxide nanocomposite based magnetoresistive random access memory devices via spin-dependent trapping of electrons
title_sort room temperature magnetic graphene oxide- iron oxide nanocomposite based magnetoresistive random access memory devices via spin-dependent trapping of electrons
publishDate 2014
url https://hdl.handle.net/10356/101677
http://hdl.handle.net/10220/19751
_version_ 1681041033385738240

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