Room temperature magnetic graphene oxide- iron oxide nanocomposite based magnetoresistive random access memory devices via spin-dependent trapping of electrons
A MRAM device is fabricated using magnetic graphene oxide- iron oxide nanoparticles nanocomposites together with a platinum electrode and a ferromagnetic cobalt electrode. The device allow for a positive magnetoresistance up to 280% via the spin-dependent trapping of charge carriers. Its low resista...
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Main Authors: | Lin, Aigu L., Peng, Haiyang, Liu, Zhiqi, Wu, Tom, Su, Chenliang, Loh, Kian Ping, Ariando, Chen, Wei, Wee, Andrew T. S. |
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Other Authors: | School of Physical and Mathematical Sciences |
Format: | Article |
Language: | English |
Published: |
2014
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/101677 http://hdl.handle.net/10220/19751 |
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Institution: | Nanyang Technological University |
Language: | English |
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